Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. TOSHIBA GT60N(Q) | Transistor: IGBT; V; 60A; W; TO3P – This product is available in Transfer Multisort Elektronik. Check out our wide range of . GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th.
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The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the gy60n321 temperatures required by lead—free soldering The restricted substances and maximum allowed concentrations in the homogenous material are, by weight: Ships within days, Delivery estimate: Your order is in dispute, please be careful.
Reviews from the Spanish site. Return Policy The returns policy applies gt60nn321 specific items. While we try to ensure product information is accurate, sellers may occasionally amend product information. The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering.
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GT60N321 IGBT. Datasheet pdf. Equivalent
The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low—saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. RS Components Statement of conformity. Reviews from Chinese Site. The other products non Joybuy c products will be charged separately; 4.
GT60N Datasheet(PDF) – Toshiba Semiconductor
Reviews from the Global site English. The product detailed below complies with the specifications published by RS Components.
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GT60N321 To-3pl Toshiba High Power Switching Applicati
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